Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-107:P TR | Dynamic random access memory | DEX MAMMOGRAPHY GEC:5372507-3

GEC:5372507-3

Multiple BCM56450 devices can be connected together using the stacking links to create high port density systems

160 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating

TPS61240DRVR

SKU : OHI:AH-BR-100-N-FCC

Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-107:P TR | Dynamic random access memory | DEX MAMMOGRAPHY GEC:5372507-3Micron Technology DRAM SDRAM DDR3L, Part #: MT41K512M8DA 107: P TR features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS