Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AUT:E | Dynamic random access memory | DEX all-auto Xilinx Field Programmable Gate Array

Xilinx Field Programmable Gate Array Part #XCZU7EG-L2FFVF1517E

Low ZOUT: 0

MT40A1G16KNR-062E:E TR

MT41K512M8DA-107:P

8x maximum rewrite speed (DVD+RW) 16x maximum write speed (DVD-R)

Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AUT:E | Dynamic random access memory | DEX all-auto Xilinx Field Programmable Gate ArrayMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E AUT: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch